Keyword Analysis & Research: beol em
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Effect of metal line width on electromigration of BEOL …
https://ieeexplore.ieee.org/document/8353600/
WebElectromigration reliability of BEOL Cu interconnects with various metal line widths and via sizes has been studied. EM lifetime significantly improves from min Effect of metal line …
DA: 32 PA: 53 MOZ Rank: 50
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Cu Barrier Seed Innovation for EM Improvement - IOPscience
https://iopscience.iop.org/article/10.1149/06001.0471ecst/pdf
WebSince the introduction of Cu interconnects, Cu barrier and seed processes have been the most important factors in successful EM qualification. Innovation in these processes has …
DA: 14 PA: 3 MOZ Rank: 58
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Electromigration extendibility of Cu(Mn) alloy-seed interconnects, …
https://ieeexplore.ieee.org/document/6479161/
WebAbstract: Cu(Mn) alloy seed BEOL studies revealed fundamental insights into Mn segregation and EM enhancement. We found a metallic-state Mn-rich Cu layer under the …
DA: 38 PA: 48 MOZ Rank: 73
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Study of the yield improvement and reliability of 28 nm ... - Springer
https://link.springer.com/article/10.1007/s10854-021-06349-9
WebComparing with 40 nm BEOL 1× metal line, the 28 nm 1× metal line need 30% reduce the CD and thickness is also need reduce for improvement margin. So that cross-section …
DA: 64 PA: 36 MOZ Rank: 43
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BEOL reliability enhancement by applying new capping materials
https://ieeexplore.ieee.org/document/7936345
WebAbstract: With the increasing miniaturization of devices, back-end-of-line (BEOL) reliability has become a prime concern. Electromigration (EM) is usually improved using cap …
DA: 64 PA: 26 MOZ Rank: 11
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Electromigration challenges for advanced on-chip Cu interconnects
https://www.sciencedirect.com/science/article/pii/S0026271414000092
Web1. Introduction. Electromigration (EM) has been one of the major reliability concerns for ULSI circuit design and applications. With the aggressive technology scaling, the concern of …
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Advanced BEOL Technology Overview | SpringerLink
https://link.springer.com/chapter/10.1007/978-0-387-95868-2_19
WebThis pretreatment provides high adhesion strength between SiCN and Cu and robust reliability of Cu wiring, mainly with respect to TDDB (time-dependent dielectric …
DA: 26 PA: 40 MOZ Rank: 86
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Detailed Microstructure Characterizations of BEOL Cu …
https://www.cambridge.org/core/services/aop-cambridge-core/content/view/96B1B69E37908EE43B3631A8DEF29F20/S143192761801142Xa.pdf/div-class-title-detailed-microstructure-characterizations-of-beol-cu-interconnects-div.pdf
WebCu interconnects in the back-end-of-line (BEOL) of semiconductor integrated chips were first introduced by IBM in 1997 through dual-damascene Cu filling and subsequent chemical …
DA: 13 PA: 24 MOZ Rank: 78
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Electromigration modeling and full-chip reliability analysis for …
https://www.researchgate.net/publication/221627502_Electromigration_modeling_and_full-chip_reliability_analysis_for_BEOL_interconnect_in_TSV-based_3D_ICs
WebElectromigration modeling and full-chip reliability analysis for BEOL interconnect in TSV-based 3D ICs. Authors: Mohit Pathak. Jiwoo Pak. David Z. Pan. University of Texas at …
DA: 53 PA: 92 MOZ Rank: 22
